Skip to Main Content
Gallium Nitride (GaN)
book

Gallium Nitride (GaN)

by Farid Medjdoub
December 2017
Intermediate to advanced content levelIntermediate to advanced
388 pages
15h 1m
English
CRC Press
Content preview from Gallium Nitride (GaN)
258 Gallium Nitride (GaN): Physics, Devices, and Technology
GaN/AlN QWs displaying ISB transitions in the near-IR can also be synthe-
sized by metalorganic vapor phase epitaxy (MOVPE) [51–53]. In this case, a criti-
cal parameter to attain devices in the telecommunication spectral range (1.3 µm,
1.55µm) is the reduction in growth temperature from the 1050°C–1100°C optimum
range for GaN growth down to 900°C–950°C (or even to 770°C [54]), to minimize
the GaN–AlN interdiffusion. Furthermore, deposition under compressive strain
(e.g., using AlN substrates) is recommended at these growth temperatures to prevent
the red shift of the ISB transition due to instabilities of the GaN/AlN interface [55].
Since GaN/AlN is a lattice-mismatched system (2.5 ...
Become an O’Reilly member and get unlimited access to this title plus top books and audiobooks from O’Reilly and nearly 200 top publishers, thousands of courses curated by job role, 150+ live events each month,
and much more.
Start your free trial

You might also like

Computational Electromagnetism

Computational Electromagnetism

Alain Bossavit, Isaak D. Mayergoyz
Radio-Frequency Digital-to-Analog Converters

Radio-Frequency Digital-to-Analog Converters

Morteza S Alavi, Jaimin Mehta, Robert Bogdan Staszewski
Voltage-Sourced Converters in Power Systems

Voltage-Sourced Converters in Power Systems

Amirnaser Yazdani, Reza Iravani

Publisher Resources

ISBN: 9781482220049