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Gallium Nitride (GaN)
book

Gallium Nitride (GaN)

by Farid Medjdoub
December 2017
Intermediate to advanced content levelIntermediate to advanced
388 pages
15h 1m
English
CRC Press
Content preview from Gallium Nitride (GaN)
268 Gallium Nitride (GaN): Physics, Devices, and Technology
[116,121]. The broadening of the absorption peak can be as small as ~80 meV for the
most homogeneous samples. This absorption line is attributed to transitions from the
ground state of the conduction band, s, to the rst excited electronic state conned
along the growth axis, p
z
. The lateral connement in the QDs should give rise to
additional transitions under TE-polarized excitation. However, taking into account
the lateral dimension of the QDs, ~7 nm, the sp
x,y
transitions should be masked by
the sapphire absorption for λ > 5 µm. The optical signature associated with sp
x,y
was rst ...
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Publisher Resources

ISBN: 9781482220049