Skip to Main Content
Gallium Nitride (GaN)
book

Gallium Nitride (GaN)

by Farid Medjdoub
December 2017
Intermediate to advanced content levelIntermediate to advanced
388 pages
15h 1m
English
CRC Press
Content preview from Gallium Nitride (GaN)
278 Gallium Nitride (GaN): Physics, Devices, and Technology
GaN/AlGaN QCDs operating in the near-IR have been reported [192,193], with
their structure illustrated in Figure 8.15. These devices take advantage of the polar-
ization-induced internal electric eld to design an efcient AlGaN/AlN (or GaN/
AlGaN) electron extractor where the energy levels are separated by approximately
the LO-phonon energy (~90 meV), forming a phonon ladder. The peak responsiv-
ity of these GaN/AlGaN QCDs at room temperature was ~10 mA/W [192,194].
Detectors containing 40 periods of active region with a size of 17 × 17 µm
2
exhibit
an RC-limited BW
–3 dB
cutoff frequency ...
Become an O’Reilly member and get unlimited access to this title plus top books and audiobooks from O’Reilly and nearly 200 top publishers, thousands of courses curated by job role, 150+ live events each month,
and much more.
Start your free trial

You might also like

Computational Electromagnetism

Computational Electromagnetism

Alain Bossavit, Isaak D. Mayergoyz
Radio-Frequency Digital-to-Analog Converters

Radio-Frequency Digital-to-Analog Converters

Morteza S Alavi, Jaimin Mehta, Robert Bogdan Staszewski
Voltage-Sourced Converters in Power Systems

Voltage-Sourced Converters in Power Systems

Amirnaser Yazdani, Reza Iravani

Publisher Resources

ISBN: 9781482220049