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Gallium Nitride (GaN)
book

Gallium Nitride (GaN)

by Farid Medjdoub
December 2017
Intermediate to advanced content levelIntermediate to advanced
388 pages
15h 1m
English
CRC Press
Content preview from Gallium Nitride (GaN)
283III-Nitride Semiconductors: New Infrared Intersubband Technologies
reported electroluminescence at 6.97 THz in a double QW structure. In this case,
the active region consisted of 200 repeats of 1.5 nm Al
0.15
Ga
0.85
N/4 nm GaN/1.5 nm
Al
0.15
Ga
0.85
N/6 nm GaN grown on an AlN-on-sapphire template.
8.7 CONCLUSIONS AND PROSPECTS
In this chapter, we have reviewed recent research on III-nitride ISB optoelectronics.
III-Nitride heterostructures are excellent candidates for high-speed ISB devices in
the near-IR thanks to their large conduction-band offset (~1.8 eV for the GaN/AlN
system) and sub-picosecond ISB scattering rates. However, bandgap engineer ...
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Publisher Resources

ISBN: 9781482220049