
283III-Nitride Semiconductors: New Infrared Intersubband Technologies
reported electroluminescence at 6.97 THz in a double QW structure. In this case,
the active region consisted of 200 repeats of 1.5 nm Al
0.15
Ga
0.85
N/4 nm GaN/1.5 nm
Al
0.15
Ga
0.85
N/6 nm GaN grown on an AlN-on-sapphire template.
8.7 CONCLUSIONS AND PROSPECTS
In this chapter, we have reviewed recent research on III-nitride ISB optoelectronics.
III-Nitride heterostructures are excellent candidates for high-speed ISB devices in
the near-IR thanks to their large conduction-band offset (~1.8 eV for the GaN/AlN
system) and sub-picosecond ISB scattering rates. However, bandgap engineer ...