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Gallium Nitride (GaN)
book

Gallium Nitride (GaN)

by Farid Medjdoub
December 2017
Intermediate to advanced content levelIntermediate to advanced
388 pages
15h 1m
English
CRC Press
Content preview from Gallium Nitride (GaN)
293III-Nitride Semiconductors: New Infrared Intersubband Technologies
142. Wada, O., 2004, “Femtosecond all-optical devices for ultrafast communication and sig-
nal processing,” New Journal of Physics, 6, pp. 183–183.
143. Noda, S., Yamashita, T., Ohya, M., Muromoto, Y., and Sasaki, A., 1993, “All- optical
modulation for semiconductor lasers by using three energy levels in n-doped quantum
wells,” IEEE Journal of Quantum Electronics, 29(6), pp. 1640–1647.
144. Iizuka, N., Kaneko, K., Suzuki, N., Asano, T., Noda, S., and Wada, O., 2000, “Ultrafast
intersubband relaxation (≤150 fs) in AlGaN/GaN multiple quantum wells,” Applied
Physics Letters, 77(5), pp. 648–650.
145. Gmachl, C., Frolov, S. V., Ng, H. M., Chu, S. -N. G., and Cho, A. Y., 2001 ...
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Publisher Resources

ISBN: 9781482220049