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Gallium Nitride (GaN)
book

Gallium Nitride (GaN)

by Farid Medjdoub
December 2017
Intermediate to advanced content levelIntermediate to advanced
388 pages
15h 1m
English
CRC Press
Content preview from Gallium Nitride (GaN)
299
9
Gallium Nitride-Based
Interband Tunnel
Junctions
Siddharth Rajan, SriramKrishnamoorthy,
and Fatih Akyol
9.1 INTRODUCTION
Efcient interband tunneling offers interesting opportunities in a wide bandgap
material system such as gallium nitride. An efcient tunnel junction (TJ) can act as a
carrier conversion center, converting electrons into holes and vice versa. In a reverse
biased TJ, electrons in the valence band of the p-type material can tunnel into empty
states in the conduction band, leaving behind a hole in the p-type material. In a forward
biased TJ, electrons in the conduction band tunnel into the empty states available in
the valence ...
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Publisher Resources

ISBN: 9781482220049