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Gallium Nitride (GaN)
book

Gallium Nitride (GaN)

by Farid Medjdoub
December 2017
Intermediate to advanced content levelIntermediate to advanced
388 pages
15h 1m
English
CRC Press
Content preview from Gallium Nitride (GaN)
304 Gallium Nitride (GaN): Physics, Devices, and Technology
probability reduces due to the increased thickness of the barrier. With t >t
cr
, degen-
erate carrier gases accumulate at the GaN/InGaN interface reducing the electric eld
in the InGaN layer if the InGaN layer thickness is further increased. Equilibrium
band diagrams of the GaN/InGaN/GaN structure with increasing thicknesses of
InGaN layer are shown in Figure 9.3.
Under reverse bias, the electrons in the valence band of p-GaN tunnel across the
p-depletion region (intra-valence band), InGaN (interband), and n-depletion region
(intra-conduction band), entering the conduction band of n-Ga ...
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Publisher Resources

ISBN: 9781482220049