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Gallium Nitride (GaN)
book

Gallium Nitride (GaN)

by Farid Medjdoub
December 2017
Intermediate to advanced content levelIntermediate to advanced
388 pages
15h 1m
English
CRC Press
Content preview from Gallium Nitride (GaN)
309Gallium Nitride-Based Interband Tunnel Junctions
holds good only for a resonant energy E
R
, where the two parabolic bands of the
2DEG and 2DHG rst sub-bands intersect as illustrated in Figure 9.7. However, the
uncertainty principle allows a range of states for tunneling where momentum is con-
served, but the energy is not conserved. In reality, the current density is expected to
be in between the extreme case of momentum conservation and the unconstrained
one. The various scattering mechanisms that can relax the stringent 2D-2D tunneling
momentum conservation are as follows. Delta doping at the interface would increase
the scattering with dopants, ...
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Publisher Resources

ISBN: 9781482220049