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Gallium Nitride (GaN)
book

Gallium Nitride (GaN)

by Farid Medjdoub
December 2017
Intermediate to advanced content levelIntermediate to advanced
388 pages
15h 1m
English
CRC Press
Content preview from Gallium Nitride (GaN)
327
10
Trapping and
Degradation Mechanisms
in GaN-Based HEMTs
Matteo Meneghini, Gaudenzio Meneghesso,
and Enrico Zanoni
10.1 INTRODUCTION
Over the last few years, GaN-based transistors have demonstrated to be excellent
devices for application in high-frequency systems (radars, communication devices,
etc.) and in the power electronics eld (power converters, photovoltaic inverters,
electric cars, etc.). This is possible thanks to the very unique characteristics of GaN,
namely the high electron mobility compared to conventional semiconductors (>2000
cm
2
/Vs), the high breakdown eld (>300 V/µm), and the high thermal conductivity
(in excess of 2 W/cmK). ...
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Publisher Resources

ISBN: 9781482220049