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Gallium Nitride (GaN)
book

Gallium Nitride (GaN)

by Farid Medjdoub
December 2017
Intermediate to advanced content levelIntermediate to advanced
388 pages
15h 1m
English
CRC Press
Content preview from Gallium Nitride (GaN)
332 Gallium Nitride (GaN): Physics, Devices, and Technology
gate bias, whereas interface states show a signicant change in their G
P
(ω)/ω spectra
when gate bias is changed [14,16,17].
The techniques described above (C-DLTS, DLOS, and g
m
-f) provide important
results on the properties of traps located under the gate of the devices; however,
due to the choice of the bias points (moderate drain bias), or to the layout of the
test structures used for the measurements (FAT-FETs and capacitors), they do not
provide exhaustive results on the trapping mechanisms that may occur in the gate-
drain access region. Moreover, these methods do not provide di
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Publisher Resources

ISBN: 9781482220049