
337Trapping and Degradation Mechanisms in GaN-Based HEMTs
TABLE 10.1 (Continued)
Database of the Deep Levels in GaN and Related Materials
Reference Analyzed Samples Energy Level (eV) Physical Origin
Stuchlikova [47] AlGaN/GaN HFET EC: 1.118 VGa + Oxygen complex
Arehart [37], Arehart [61],
Arehart [53] Hierro [56]
Various GaN-based
devices
EC: 1.28/1.35 Carbon interstitial
defect
Sasikumar [62] AlGaN/GaN
HEMT on SiC
EC: 2.3 Surface
Zhang [63] c/m plane GaN EC: 2.47/2.49 VGa + Hydrogen
complex
Aggerstam [64] Fe doped GaN EV + 2.5/3 Fe dopant
Arehart [37], Arehart [61],
Hierro [56]
Various GaN-based
devices
EC: 2.6/2.64 VGa or VGa-H or
VGa-2H
Arehart [65] AlGaN ...