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Gallium Nitride (GaN)
book

Gallium Nitride (GaN)

by Farid Medjdoub
December 2017
Intermediate to advanced content levelIntermediate to advanced
388 pages
15h 1m
English
CRC Press
Content preview from Gallium Nitride (GaN)
347Trapping and Degradation Mechanisms in GaN-Based HEMTs
more detailed description of the degradation process: according to their conclusions,
the damage generated after stress may be located at the AlGaN surface, or—in any
case—far from the channel.
10.5.1 BreAkdown in gan-heMts
Gallium nitride transistors are expected to play an important role in the next-gener-
ation power converters, thanks to the high expected breakdown voltage, which is a
direct consequence of the high breakdown eld of GaN (>300 V/µm). However, sev-
eral authors (see for instance [21,112,113,118,124]) demonstrated that the breakdown
voltage of GaN-HEMTs can be signica
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Publisher Resources

ISBN: 9781482220049