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Gallium Nitride (GaN)
book

Gallium Nitride (GaN)

by Farid Medjdoub
December 2017
Intermediate to advanced content levelIntermediate to advanced
388 pages
15h 1m
English
CRC Press
Content preview from Gallium Nitride (GaN)
357Trapping and Degradation Mechanisms in GaN-Based HEMTs
66. A. Sasikumar, A. Arehart, S. Kolluri et al., “Access-region defect spectroscopy of
DC-stressed N-polar GaN MIS-HEMTs,” IEEE Electron Dev Lett, 33(5), 658–660
(2012).
67. T. A. Henry, A. Armstrong, K. M. Kelchner, S. Nakamura, S. P. DenBaars, and
J.S.Speck, “Assessment of deep level defects in m-plane GaN grown by metalorganic
chemical vapor deposition,” Appl Phys Lett, 100, 082103 (2012).
68. M. Meneghini, A. Stocco, R. Silvestri, G. Meneghesso, and E. Zanoni, “Degradation of
AlGaN/GaN high electron mobility transistors related to hot electrons,” Appl Phys Lett,
100, 233508 (2012).
69. M. Meneghini, A. Stocco, R. Silvestri N. Ronchi, G. Meneghesso, and E. Zanoni,
“Impact of ...
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Publisher Resources

ISBN: 9781482220049