Integrated Devices for Artificial Intelligence and VLSI

4GaAs Nanowire Field Effect Transistor

Shailendra Yadav¹, Mandeep Singh², Tarun Chaudhary², Balwinder Raj²*, Alok Kumar Shukla¹ and Brajesh Kumar Kaushik¹

¹Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, India

²Department of Electronics and Communication Engineering, Dr. B. R. Ambedkar National Institute of Technology Jalandhar, Punjab, India

Abstract

The unique characteristics of nanowire field effect transistors (NW FETs), such as high electron mobility, low power consumption, and scalability, have made them a promising technology for upcoming electronic devices. An overview of the underlying concepts, methods of fabrication, and performance traits of NW FETs are given in this chapter. The chapter discusses the benefits and drawbacks of NW FETs, including how contact resistance, defect density, and surface effects affect device performance. The chapter also highlights the potential uses of NW FETs in several industries, including sensing, computing, and energy harvesting. Overall, this chapter offers a thorough reference for researchers and engineers interested in this innovative technology since NW FETs are anticipated to play a significant role in the creation of next-generation electronic devices.

Keywords: FET, NW FET, NEMS

4.1 Introduction

Nanowires are small, cylindrical constructions that range in size from a few micrometers to several millimeters. Their diameter is generally less than 100 nm. They may be ...