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Measurement, Instrumentation, and Sensors Handbook, Second Edition, 2nd Edition
book

Measurement, Instrumentation, and Sensors Handbook, Second Edition, 2nd Edition

by John G. Webster, Halit Eren
February 2014
Intermediate to advanced content levelIntermediate to advanced
1921 pages
82h 13m
English
CRC Press
Content preview from Measurement, Instrumentation, and Sensors Handbook, Second Edition, 2nd Edition
44-26 Optical
andSiC(4H) [85–87]. Note that the reectance is plotted on a linear scale, whereas the absorption
coecient is plotted on a log scale.
As se
en
in th
e
pl
ot
fo
r
Ga
As,
wh
ich
is Al
x
Ga
1–x
As for x = 0, the absorption depths at 320 and 380 nm
are 75 and 72 μm, respectively. is suggests that a “dead layer” of more than 10 nm would have a sig-
nicant
im
pact
on re
ducing
th
e
DE fo
r
th
ese
wa
velengths
. e ab
sorption
de
pths
at 32
0
an
d
38
0
nm fo
r
Al
0.8
Ga
0.2
As are 80 and 20 μm, respectively. is suggests that a “dead layer” of 10 nm would eectively
block 320 nm, but some 380 nm light would pass through. e values for the absorption depths
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Publisher Resources

ISBN: 9781439848913