
55-36 Chemical Variables
for the saturated region (V
D
> V
G
− V
T
), with
V E V
W
q
Q Q
C
Q
C
T ref
S i ss
i
sc
i
B
= − + − −
− +∆ χ 2
φ
(55.51)
where,
μ is the mobility of the electrons in the channel between source and drain
b is the width
L
i
s
t
he
l
ength
o
f
t
he
c
hannel
C
i
represents the capacitance of the gate insulator per unit area
E
ref
is the potential of the reference electrode
χ is the surface-dipole potential of the solution
W
S
is the silicon electron work functions
q is the elementary charge (1.6 × 10
−19
C)
Q
sc
, Q
i
, and Q
ss
are the charges per unit area in the space-charge region as well as located in the oxide
and the surface/interface states, respectively