December 2017
Intermediate to advanced
274 pages
8h 6m
English
Xiaochun Zhu and Seung H. Kang
Qualcomm Technologies Incorporated, San Diego, California
CONTENTS
2.2.1 Magnetic Tunnel Junction (MTJ)
2.2.2 Tunnel Magnetoresistance
2.2.4.2 Switching Current: Phenomenological Description
2.2.5 Perpendicular Magnetic Anisotropy MTJ
2.3.2 High-Density Array Architecture
2.3.3 Bitcells for Enhanced Writability