Metallic Spintronic Devices

 6

 

Electric Field-Induced Switching for Magnetic Memory Devices

 

Pedram Khalili and L. Wang Kang

Department of Electrical Engineering, University of California, Los Angeles, Los Angeles, California

CONTENTS

6.1 Introduction

6.2 Nonvolatile Spintronic Memory: Requirements and Solutions

6.3 Spin-Transfer Torque (STT) and Its Application in Memory Devices

6.3.1 STT-MRAM with In-Plane Free Layers

6.3.2 STT-MRAM with Perpendicular Free Layers

6.3.3 STT-MRAM with Spin Hall-Based MTJ Devices

6.4 Voltage-Controlled Magnetic Anisotropy (VCMA) Effect in Magnetic Films

6.5 Voltage-Induced Ferromagnetic Resonance Excitation

6.6 Voltage-Induced Switching of Magnetic Memory Bits

6.7 Analysis of VCMA-Induced Switching

6.7.1 Perpendicular Bits

6.7.2 In-Plane ...