December 2017
Intermediate to advanced
274 pages
8h 6m
English
Pedram Khalili and L. Wang Kang
Department of Electrical Engineering, University of California, Los Angeles, Los Angeles, California
CONTENTS
6.2 Nonvolatile Spintronic Memory: Requirements and Solutions
6.3 Spin-Transfer Torque (STT) and Its Application in Memory Devices
6.3.1 STT-MRAM with In-Plane Free Layers
6.3.2 STT-MRAM with Perpendicular Free Layers
6.3.3 STT-MRAM with Spin Hall-Based MTJ Devices
6.4 Voltage-Controlled Magnetic Anisotropy (VCMA) Effect in Magnetic Films
6.5 Voltage-Induced Ferromagnetic Resonance Excitation
6.6 Voltage-Induced Switching of Magnetic Memory Bits