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Microwave Engineering
book

Microwave Engineering

by Ahmad Shahid Khan
May 2014
Intermediate to advanced content levelIntermediate to advanced
800 pages
24h 50m
English
CRC Press
Content preview from Microwave Engineering
548 Microwave Engineering
where V
b
is the applied voltage, V
b
is the breakdown voltage and parameter
n varies between 3 and 6 for silicon. In the saturation process the satura-
tion velocity for carriers generally exists in all semiconductor devices. In p-n
junction the motion of carriers takes place with carrier drift velocity. This
velocity becomes constant under the inuence of E. The threshold value of E
for silicon is 10
4
V/m.
13.6.2.2 Construction
IMPATT diode illustrated in Figure 13.36a is a solid-state power device made
from a highly doped semiconductor layer. This is called n
+
layer. On this
layer another n
layer is deposited epi
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Publisher Resources

ISBN: 9781466591417