573Microwave Diodes
Solution
Given E
th
= 3.3 kV/m, L = 15 μm, n
0
= 2 × 10
21
/m
3
, e = 1.6 × 10
−19
C,
υ
0
= 2 × 10
5
m/s, A = 4 × 10
−8
m
2
,
η
= 0.05 and M = 4
In view of Equation 13.27
P =
η
(M E
th
L) (n
0
e
υ
0
A) = 0.05 (4 × 3.3 × 10
3
× 15 × 10
−6
)
× (2 × 10
21
× 1.6 × 10
−19
× 2 × 10
5
× 4 × 10
−8
)
= 25.344 mW
EXAMPLE 13.6
Calculate the avalanche multiplication factor (M) if the applied voltage
V = 100 V, avalanche breakdown voltage V
b
= 200 V and numerical factor
for silicon is n = 5.
Solution
Given V = 100 V, V
b
= 200 V, n = 4
In view of Equation 13.29
M = 1/{1 − (V/V
b
)
n
} = 1/{1 − (100/200)
4
} = 1/{1 − (0.5)
4
} = 1.067
EXAMPLE 13.7
Calculate the critical voltage of a BARITT diode if the relative dielec-
tric constant of silicon
ε
r
= 11.8, donor co