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Microwave Engineering
book

Microwave Engineering

by Ahmad Shahid Khan
May 2014
Intermediate to advanced content levelIntermediate to advanced
800 pages
24h 50m
English
CRC Press
Content preview from Microwave Engineering
589Microwave Transistors
14.3.1.7 Limitations of Transistors
Johnson studied the limitations of transistors in view of the following
assumptions:
• The maximum possible velocity of carriers in a semiconductor is the
saturated drift velocity (
υ
s
), which is on the order of 6 × 10
6
cm/s for
electrons and holes in silicon and germanium.
• The maximum electric eld (E
m
) sustained in a semiconductor
without dielectric breakdown is about 10
5
V/cm in germanium and
2 × 10
5
V/cm in silicon.
• The maximum current of a microwave power transistor is limited
by its base width.
In view of these assumptions, the four derived relations specify (i) voltage–
frequency limitation, (ii) current–frequency limitation, (iii) power–frequency
limitation ...
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Publisher Resources

ISBN: 9781466591417