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Microwave Engineering
book

Microwave Engineering

by Ahmad Shahid Khan
May 2014
Intermediate to advanced content levelIntermediate to advanced
800 pages
24h 50m
English
CRC Press
Content preview from Microwave Engineering
619Microwave Transistors
The transistor is on, and a channel is created that allows current to
ow between the drain and the source. The MOSFET operates like a
resistor, controlled by the gate voltage relative to both the source and
drain voltages. The current from the drain to the source is given as
I C Z L V V V V
d n
= µ
ox gs th ds ds
2
/ { /2 }( ) ( ) ( ) )
(14.63)
where
μ
n
is the charge-carrier effective mobility, Z is the gate width,
L is the gate length and C
ox
is the gate oxide capacitance per unit
area. The transition from the exponential sub-threshold region to
the triode region is not sharp.
3. Saturation or active mode: This case is shown in Figure 14.29c wherein
V
gs
> V
th
and V
ds
> (V
gs
V
th
). The switch is turned on,
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Publisher Resources

ISBN: 9781466591417