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Microwave Engineering
book

Microwave Engineering

by Ahmad Shahid Khan
May 2014
Intermediate to advanced content levelIntermediate to advanced
800 pages
24h 50m
English
CRC Press
Content preview from Microwave Engineering
639Microwave Transistors
an electrical bias or other means, such as UV light, can be used. In oating-
gate devices, the programming can be done by either hot carrier injection
or a tunnelling process. The two cases are shown in Figures 14.48 and 14.49.
The hot electrons are ‘hot’ because they are heated to a high-energy state by
the high eld near the drain. Some of the hot electrons with energy higher
than the barrier height of SiO
2
/Si conduction band (~3.2 eV) can surmount
the barrier and get injected into oating gate.
Control gate Control gate
Floating
gate
Floating
dot
Substrate
Channel
Source
Source
Drain
Drain
FIGURE 14.48
Programming by hot carr
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Publisher Resources

ISBN: 9781466591417