This chapter consists of four parts as follows:
Part one: Basics of metal oxide semiconductor field effect transistors (FETs)
The basics of metal oxide semiconductor FETs MOSFET structure, functionality, and design are presented. The transition from two-dimensional (2D) (or planar) MOSFETs to three-dimensional (3D) transistors is discussed.
Part two: Strain engineering in group IV materials
The strain engineering including the basic definition and the effect of strain on carrier mobility is presented. The strain measurements using Raman, transmission electron microscopy and X-ray diffraction are briefly presented.
Part three: Chemical vapor deposition (CVD) of group IV materials