This chapter consists of four parts as follows:
Part one: Silicon photonic elements for integrated photonics
In the first part, silicon electro-optic modulators, wavelength selective devices, and ring resonators have described.
Part two: Bandgap engineering in group IV materials for photonic application
In this part, the bandstructure of Ge and GeSn(Si) materials has been described.
Part three: Group IV–based detectors and lasers
In this chapter, different designs of GeSn(Si)-based detectors are presented. The GeSn(Si) is implemented either as a template to induce strain in Ge detectors or as active material in the GeSn detectors. Furthermore, GeSn(Si) can also be integrated in laser structures for intersubband ...