Chapter 3

Silicon and Group IV Photonics

This chapter consists of four parts as follows:

Part one: Silicon photonic elements for integrated photonics

In the first part, silicon electro-optic modulators, wavelength selective devices, and ring resonators have described.

Part two: Bandgap engineering in group IV materials for photonic application

In this part, the bandstructure of Ge and GeSn(Si) materials has been described.

Part three: Group IV–based detectors and lasers

In this chapter, different designs of GeSn(Si)-based detectors are presented. The GeSn(Si) is implemented either as a template to induce strain in Ge detectors or as active material in the GeSn detectors. Furthermore, GeSn(Si) can also be integrated in laser structures for intersubband ...

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