Nano Optoelectronic Sensors and Devices

Chapter 8. Carbon Nanotube Field-Effect Transistor-Based Photodetectors

Hongzhi Chen, Ning Xi and King Wai Chiu Lai

Department of Electrical and Computer Engineering, Michigan State University, Michigan

Chapter Outline

8.1 Introduction 125

8.2 Back-Gate Au–CNT–Au Transistors 127

8.3 Back-Gate Ag–CNT–Ag Transistors 130

8.4 Back-Gate Au–CNT–Ag Transistors 132

8.5 Middle-Gate Transistors 136

8.6 Multigate Transistors 139

8.7 Detector Array Using CNT-Based Transistors 146

8.8 Summary 147

References 148

1D Schottky photodiodes between an individual CNT and metals are responsible for the photocurrent (I_photo) generation under continuous IR illumination. The optoelectronic characteristics of CNT-based IR detectors are determined by the Schottky barriers, which depend ...