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Nano-Semiconductors
book

Nano-Semiconductors

by Krzysztof Iniewski
September 2018
Intermediate to advanced content levelIntermediate to advanced
599 pages
22h 18m
English
CRC Press
Content preview from Nano-Semiconductors
376 Nano-Semiconductors: Devices and Technology
32. Kurishima, K., S. Yamahata, H. Nakajima, H. Ito, and Y. Ishii. 1998. Performance and
stability of MOVPE-grown carbon-doped InP/InGaAs HBTs dehydrogenated by an
anneal after emitter mesa formation. Jpn. J. Appl. Phys. Part 1 37: 1353–1358.
33. Lutz, C. R., R. E. Welser, N. Pan, K. M. Lau, and C. F. Musante. 2000. Transient char-
acteristics of InGaP/GaAs/AlGaAs double heterojunction bipolar transistors. In GaAs
MANTECH, 2000, pp. 149–152.
34. Nakamura, S., N. Iwasa, M. Senoh, and T. Mukai. 1992. Hole compensation mechanism
of p-type GaN lms. Jpn. J. Appl. Phys. Part 1 31: 1258–1266.
35. Pearton, S. J., C. R. Abernathy, C. B. Vartuli, J. W. Lee, J. D. MacKenzie, R. G. Wilson, ...
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Publisher Resources

ISBN: 9781439848364