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Nanoelectronic Device Applications Handbook

Book Description

Nanoelectronic Device Applications Handbook gives a comprehensive snapshot of the state of the art in nanodevices for nanoelectronics applications. Combining breadth and depth, the book includes 68 chapters on topics that range from nano-scaled complementary metal–oxide–semiconductor (CMOS) devices through recent developments in nano capacitors and AlGaAs/GaAs devices. The contributors are world-renowned experts from academia and industry from around the globe.

The handbook explores current research into potentially disruptive technologies for a post-CMOS world. These include:

  • Nanoscale advances in current MOSFET/CMOS technology
  • Nano capacitors for applications such as electronics packaging and humidity sensors
  • Single electron transistors and other electron tunneling devices
  • Quantum cellular automata and nanomagnetic logic
  • Memristors as switching devices and for memory
  • Graphene preparation, properties, and devices
  • Carbon nanotubes (CNTs), both single CNT and random network
  • Other CNT applications such as terahertz, sensors, interconnects, and capacitors
  • Nano system architectures for reliability
  • Nanowire device fabrication and applications
  • Nanowire transistors
  • Nanodevices for spintronics

The book closes with a call for a new generation of simulation tools to handle nanoscale mechanisms in realistic nanodevice geometries.

This timely handbook offers a wealth of insights into the application of nanoelectronics. It is an invaluable reference and source of ideas for anyone working in the rapidly expanding field of nanoelectronics.

Table of Contents

  1. Cover
  2. Half Title
  3. Title Page
  4. Copyright Page
  5. Table of Contents
  6. Foreword
  7. Preface
  8. Editors
  9. Contributors
  10. SECTION I Nano-CMOS Modeling
    1. Chapter 1 Validation of Nano-CMOS Predictive Technology Model Tool on NanoHUB.org
    2. Chapter 2 Comparative Analysis of Mobility and Dopant Number Fluctuation Models for the Threshold Voltage Fluctuation Estimation in 45 nm Channel Length MOSFET Device
    3. Chapter 3 Impact of Random Interface Traps on Asymmetric Characteristic Fluctuation of 16-nm-Gate MOSFET Devices
  11. SECTION II Nano-CMOS Technology
    1. Chapter 4 Bottom-Up Approaches for CMOS Scaling in the Nanoscale Era
    2. Chapter 5 Study of Lanthanum Incorporated HfO2 Nanoscale Film Deposited as an MOS Device Structure Using a Dense Plasma Focus Device
    3. Chapter 6 Low-Power Reliable Nano Adders
  12. SECTION III Nano Capacitors
    1. Chapter 7 Package-Compatible High-Density Nano-Scale Capacitors with Conformal Nano-Dielectrics
    2. Chapter 8 Modified Carbon Nanostructures for Display and Energy Storage
    3. Chapter 9 Production and Characterization of Nanoparticle Dispersions of Organic Semiconductors for Potential Applications in Organic Electronics
    4. Chapter 10 Investigation of Charge Accumulation in Si3N4/SiO2 Dielectric Stacks for Electrostatically Actuated NEMS/MEMS Reliability
  13. SECTION IV Terahertz Systems and Devices
    1. Chapter 11 Nano Antennas for Energy Conversion
    2. Chapter 12 Ballistic Transistor Logic for Circuit Applications
  14. SECTION V Single-Electron Transistors and Electron Tunneling Devices
    1. Chapter 13 Simultaneously Controlled Tuning of Tunneling Properties of Integrated Nanogaps Using Field-Emission-Induced Electromigration
    2. Chapter 14 High-Resistive Tunnel Junctions for Room-Temperature-Operating Single- Electron Transistors Fabricated Using Chemical Oxidation of Tungsten Nanoparticles
    3. Chapter 15 Axon-Inspired Communication Systems
    4. Chapter 16 Electromechanical Modeling of GNP Nanocomposites for Integrated Stress Monitoring of Electronic Devices
  15. SECTION VI Quantum Cellular Automata
    1. Chapter 17 An HDL Model of Magnetic Quantum-Dot Cellular Automata Devices and Circuits
    2. Chapter 18 Restoring Divider Design for Quantum-Dot Cellular Automata
    3. Chapter 19 LINA-QCA: Theory, Design, and Viable Implementation Strategies
    4. Chapter 20 Minimal Majority Gate Mapping of Four-Variable Functions for Quantum-Dot Cellular Automata
  16. SECTION VII Memristors, Resistive Switches, and Memory
    1. Chapter 21 Nanodevices: Describing Function and Liénard Equation
    2. Chapter 22 Sensing and Writing Operations of Nano-Crossbar Memory Arrays
    3. Chapter 23 Modeling of Complementary Resistive Switches
    4. Chapter 24 Hybrid Design of a Memory Cell Using a Memristor and Ambipolar Transistors
    5. Chapter 25 Spike Timing-Dependent Plasticity Using Memristors and Nano-Crystalline Silicon TFT Memories
    6. Chapter 26 Thermally Actuated Nanoelectromechanical Memory: A New Memory Concept for Spacecraft Application
  17. SECTION VIII Graphene Preparation and Properties
    1. Chapter 27 Low-Stress Transfer of Graphene and Its Tunable Resistance by Remote Plasma Treatments in Hydrogen
    2. Chapter 28 High-Yield Dielectrophoretic Deposition and Ion Sensitivity of Graphene
    3. Chapter 29 Multilayer Graphene Grid and Nanowire Fabrication and Printing
  18. SECTION IX Graphene Devices
    1. Chapter 30 Nanotransistors Using Graphene Interfaced with Advanced Dielectrics for High-Speed Communication
    2. Chapter 31 Graphene-on-Diamond Devices and Interconnects: Carbon sp2-on-sp3 Technology
    3. Chapter 32 Graphene Band Gap Modification via Functionalization with Metal-Bis-Arene Molecules
  19. SECTION X Carbon Nanotube Applications
    1. Chapter 33 Integrating Low-Temperature Carbon Nanotubes as Vertical Interconnects in Si Technology
    2. Chapter 34 Readout Circuit Design for MWCNT Infrared Sensors
    3. Chapter 35 Use of Vertically Aligned Carbon Nanotubes for Electrochemical Double- Layer Capacitors
    4. Chapter 36 Spray Deposition of Carbon Nanotube Thin Films
    5. Chapter 37 Electrical Control of Synthesis Conditions for Locally Grown CNTs on a Polysilicon Microstructure
  20. SECTION XI Carbon Nanotube Transistor Modeling
    1. Chapter 38 A Qualitative Comparison of Energy Band Gap Equations with a Focus on Temperature and Its Effect on CNTFETs
    2. Chapter 39 Real-Time Quantum Simulation of Terahertz Response in Single-Walled Carbon Nanotube
  21. SECTION XII Carbon Nanotube Transistor Fabrication
    1. Chapter 40 Fabrication of Stable n-Type Thin-Film Transistor with Cs Encapsulated Single-Walled Carbon Nanotubes
    2. Chapter 41 Printing Technology and Advantage of Purified Semiconducting Carbon Nanotubes for Thin Film Transistors
  22. SECTION XIII Random CNT Network Transistors
    1. Chapter 42 Solution-Processed Random Carbon Nanotube Networks Used in a Thin-Film Transistor
    2. Chapter 43 Analysis of Yield Improvement Techniques for CNFET-Based Logic Gates
    3. Chapter 44 Low-Power and Metallic-CNT-Tolerant CNTFET SRAM Design
  23. SECTION XIV Nano-Redundant Systems
    1. Chapter 45 Optimized Built-In Self-Test Technique for CAEN-Based Nanofabric Systems
    2. Chapter 46 Adaptive Fault-Tolerant Architecture for Unreliable Device Technologies
  24. SECTION XV Nanowire Fabrication
    1. Chapter 47 Growth and Characterization of GaAs Nanowires Grown on Si Substrates
    2. Chapter 48 Synthesis and Characterization of n- and p-Doped Tin Oxide Nanowires for Gas Sensing Applications
    3. Chapter 49 Cu Silicide Nanowires: Fabrication, Characterization, and Application to Li-Ion Batteries
    4. Chapter 50 High-Aspect-Ratio Metallic Nanowires by Pulsed Electrodeposition
  25. SECTION XVI Nanowire Applications
    1. Chapter 51 Zinc Oxide Nanowires for Biosensing Applications
    2. Chapter 52 Aqueous Synthesis of n-/p-type ZnO Nanorods on Porous Silicon for the Application of p–n Junction Device
    3. Chapter 53 High Surface-Enhanced Raman Scattering (SERS) as an Analytical Tool Using Silver Nanoparticles on GaN Nanowires
  26. SECTION XVII Nanowire Transistors
    1. Chapter 54 High-Speed and Transparent Nanocrystalline ZnO Thin Film Transistors
    2. Chapter 55 First-Principle Study of Energy-Band Control by Cross-Sectional Morphology in [110]-Si Nanowires
    3. Chapter 56 Interplay of Self-Heating and Short-Range Coulomb Interactions due to Traps in a 10 nm Channel Length Nanowire Transistor
    4. Chapter 57 Impact of Phonon Scattering in an Si GAA Nanowire FET with a Single Donor in the Channel
    5. Chapter 58 Modeling and Minimizing Variations of Gate-All-Around Multiple-Channel Nanowire TFTs
    6. Chapter 59 Characterization of Gate-All-Around Si-Nanowire Field-Effect Transistor: Extraction of Series Resistance and Capacitance–Voltage Behavior
  27. SECTION XVIII Nanomagnetic Logic
    1. Chapter 60 Nonvolatile Logic-in-Memory Architecture: An Integration between Nanomagnetic Logic and Magnetoresistive RAM
    2. Chapter 61 Implementation of a Nanomagnet Full Adder Circuit
    3. Chapter 62 Investigations on Nanomagnetic Logic by Experiment-Based Compact Modeling
    4. Chapter 63 Parallel Energy Minimizing Computation via Dipolar Coupled Single Domain Nanomagnets
  28. SECTION XIX Spintronics
    1. Chapter 64 On Physical Limits and Challenges of Graphene Nanoribbons as Interconnects for All-Spin Logic
    2. Chapter 65 Influence of Impurity and Dangling Bond Scattering on the Conductance Anomalies of Side-Gated Quantum Point Contacts
    3. Chapter 66 Electric Field-Controlled Spin Interactions in Quantum Dot Molecules
    4. Chapter 67 Material Issues for Efficient Spin-Transfer Torque RAMs
  29. SECTION XX Nanodevice Modeling
    1. Chapter 68 Atomic-Scale Modeling of Nanoscale Devices
  30. Index