Sensing and Writing Operations of Nano-Crossbar Memory Arrays |
CONTENTS
22.1 Introduction
22.2 Reading Operation of Crossbar Arrays
22.2.1 Voltage Configurations for Reading Operation
22.2.2 Sensing Margin
22.2.3 Disturbance and Power Efficiency
22.3 A Crossbar Array Solution Based on Matrix Algebra
22.4 Effect of Nonlinear Memory Characteristics
22.5 Writing Operation of Crossbar Arrays
22.6 Discussions and Summary
References
22.1 INTRODUCTION
Many nanoarchitectures are based on the crossbar arrays where active devices are built at the junctions between access lines laid out in orthogonal arrangement [1]. NanoFabrics [2], nanoscale programmable logic array (NanoPLA) [3], and nanoscale application-specific integrated circuit (NASIC) ...
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