Nanoelectronic Device Applications Handbook

55	First-Principle Study of Energy-Band Control by Cross-Sectional Morphology in [110]-Si Nanowires Shinya Kyogoku, Jun-Ichi Iwata and Atsushi Oshiyama

CONTENTS

55.1  Introduction

55.2  Method

55.3  Results and Discussion

55.3.1  Effects of Cross-Sectional Shape

55.3.2  Origins of Dependence on Cross-Sectional Shapes

55.3.3  Effects of Sidewall Roughness

55.4  Conclusions

References

55.1  INTRODUCTION

Si nanowire field-effect transistors (SiNW FETs) are expected to be boosters in postscaling semiconductor technology. Bangsaruntip et al. have indeed achieved excellent control of SiNW sizes utilizing conventional complementary metal oxide semiconductor (CMOS) fabrication processes and then observed clear scaling of short-channel effects versus ...