Nanoelectronic Device Applications Handbook

56	Interplay of Self-Heating and Short-Range Coulomb Interactions due to Traps in a 10 nm Channel Length Nanowire Transistor Arif Hossain, Dragica Vasileska, Katerina Raleva and Stephen M. Goodnick

CONTENTS

56.1  Introduction

56.2  Simulation Results

56.3  Conclusions

References

56.1  INTRODUCTION

Random telegraph noise fluctuations (RTF) manifest themselves as fluctuations in the transistor threshold voltage and drive (ON) current. RTF is caused by random trapping and detrapping of charges lying at the inversion channel of the device close to the oxide–semiconductor interface [1]. Traditionally, RTF were important only in analog design at low frequencies [2]. However, as complementary metal-oxide-semiconductor (CMOS) is scaling into the ...