O'Reilly logo

Nanoelectronic Device Applications Handbook by Krzysztof Iniewski, James E. Morris

Stay ahead with the world's most comprehensive technology and business learning platform.

With Safari, you learn the way you learn best. Get unlimited access to videos, live online training, learning paths, books, tutorials, and more.

Start Free Trial

No credit card required

56

Interplay of Self-Heating and Short-Range Coulomb Interactions due to Traps in a 10 nm Channel Length Nanowire Transistor

Arif Hossain, Dragica Vasileska, Katerina Raleva and Stephen M. Goodnick

CONTENTS

56.1  Introduction

56.2  Simulation Results

56.3  Conclusions

References

56.1  INTRODUCTION

Random telegraph noise fluctuations (RTF) manifest themselves as fluctuations in the transistor threshold voltage and drive (ON) current. RTF is caused by random trapping and detrapping of charges lying at the inversion channel of the device close to the oxide–semiconductor interface [1]. Traditionally, RTF were important only in analog design at low frequencies [2]. However, as complementary metal-oxide-semiconductor (CMOS) is scaling into the ...

With Safari, you learn the way you learn best. Get unlimited access to videos, live online training, learning paths, books, interactive tutorials, and more.

Start Free Trial

No credit card required