Nanoelectronic Device Applications Handbook

58	Modeling and Minimizing Variations of Gate-All-Around Multiple-Channel Nanowire TFTs Po-Chun Huang, Lu-An Chen, C. C. Chen and Jeng-Tzong Sheu

CONTENTS

58.1  Introduction

58.2  Experiment

58.3  Results and Discussion

58.4  Conclusion

Acknowledgement

References

58.1  INTRODUCTION

Although polysilicon thin-film transistors (poly-Si TFTs) are attracting much attention for their use in active-matrix liquid crystal displays [1,2], fine-grain structures in the channel can affect their carrier transport and device performance. Poly-Si consists of a number of single-crystal grains. Between poly-Si grains, there exists a high defect density region called the grain boundary with a typical value of defect density ca. 10¹² cm⁻². Such a large number ...