365
Appendix B: Silicon Parameters
Name Symbol Value Units
Density of states (conduction band) N
c3
2.86 × 10
19
2.86 × 10
25
cm
−3
m
−3
Density of states (valence band) N
v3
3.10 × 10
19
3.10 × 10
25
cm
−3
m
−3
Dielectric constant (relative permittivity)
κ or ε
r
11.8
Dielectric constant (relative permittivity) of SiO
2
κ
0x
(ε
rox
)
3.9
Effective mass (density of states) of an electron
m
dsn
*
1.09m
o
Effective mass (density of states) of a hole
m
dsp
*
1.15m
o
Effective mass (conductivity) of an electron
m
cn
*
0.26m
o
Effective mass (conductivity) of a hole
m
cp
*
0.36m
o
Effective mass—longitudinal of an electron
m
*
0.92m
o
Effective mass—transverse of an electron
m
t
*
0.198m
o
Effective mass—heavy holes
m
hh
*
0.48m
o
Effective mass—light holes
m
h
*
0.16m
o
Effective mass—split-off band
m
sh
*
0.24m
o
Electron mobility
μ
n
1400
0.14
cm
2
/V ⋅ s
m
2
/V ⋅ s
Electron afnity
χ
4.05 eV
Energy bandgap E
g
1.1242 eV
Energy of an optical phonon E
ph
0.063 eV
Hole mobility
μ
p
400
0.04
cm
2
/V ⋅ s
m
2
/V ⋅ s
Intrinsic carrier concentration n
i3
1.08 × 10
10
1.08 × 10
16
cm
−3
m
−3
Split-off band separation
Δ
0.044 eV
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