369
Appendix D: Semiconductor Properties
370 Appendix D
Crystal
Structure
Lattice Constant
(Å)
Energy
Gap
(eV)
Electron
Effective
Mass
Hole Effective
Mass
Static
Dielectric
Constant
Refractive
Index
Electron
Mobility
(cm
2
/V ⋅ s)
Hole
Mobility
(cm
2
/V ⋅ s)
C Dia C
Si Dia 5.4310 1.11X m
1
0.98 m
l
0.16 11.7 3.44 1350 480 Si
m
t
0.19 m
h
0.5
Ge Dia 5.6461 0.67L m
1
1.58 m
l
0.04 16.3 4.00 3900 1900 Ge
m
t
0.08 m
h
0.3 2000 1000
α-Sn
Dia 6.4892 0.08Г 0.02 10.2 2.65 500 Sn
α-SiC
Wur a 3.0865 2.8
α-SiC
c 15.117
AIN Wur a 3.111 5.9i AIN
c 4.978
AIP Sph 5.4625 2.43X 0.13 9.8 3.0 80 AIP
AIAs Sph 5.6605 2.16X 0.5 m
l
0.49 12.0 1000 180
m
h
1.06
AISb Sph 6.1355 1.52X 0.11 0.39 11 3.4 200 300 AISb
GaN Wur a 3.189 3.4Г 0.2 0.8 12 2.4 300 GaN
c 5.185
GaP Sph 5.4506 2.26X 0.13 0.67 10 3.37 300 150 GaP
GaAs Sph 5.6535 1.43Г 0.067 0.12 12.5 3.4 8500 400 GaAs
0.5
GaSb Sph 6.0954 0.72Г 0.045 0.39 15 3.9 5000 1000 GaSb
InN Wur a 3.533 2.4Г InN
c 5.693
371Appendix D
InP Sph 5.8688 1.35Г 0.07 0.40 12.1 3.37 4000 600 InP
InAs Sph 6.0584 0.36Г 0.028 0.33 12.5 3.42 22,600 200 InAs
InSb Sph 6.4788 0.18Г 0.013 0.18 18 3.75 100,000 1700 InSb
ZnS Sph 5.4109 3.6Г 0.39 8.3 2.4 110 ZnS
ZnSe Sph 5.6686 2.58Г 0.17 8.1 2.89 600 ZnSe
ZnTe Sph 6.1037 2.25Г 0.15 9.7 3.56 ZnTe
CdS Wur a 2.42Г 0.20 0.7 8.9 2.5 250 CdS
c
CdSe Wur a 1.73Г 0.13 0.4 10.6 650 CdSe
c
CdTe Sph 6.4816 1.50Г 0.11 0.35 10.9 2.75 1050 100 CdTe
HgS Sph 5.852 2.0Г 0.045 25 50 HgS
HgSe Sph 6.084
−0.15Г
0.029 0.3 20 3.7 18,500 HgSe
HgTe Sph 6.4616
−0.15Г
22,000 100 HgTe
GeS Orth 1.8 GeS
GeSe Orth 1.16 70 GeSe
GeTe NaCl 5.986 100 GeTe
SnS Orth 1.08 90 SnS
SnSe Orth 0.9 110 SnSe
SnTe NaCl 6.325 0.18L 400 SnTe
PbS NaCl 5.936 0.37L 0.1 0.1 170 3.7 500 600 PbS
PbSe NaCl 6.147 0.26L m
l
0.07 m
l
0.06 250 1,800 930 PbSe
m
h
0.039 m
h
0.03
Continued
372 Appendix D
Crystal
Structure
Lattice Constant
(Å)
Energy
Gap
(eV)
Electron
Effective
Mass
Hole Effective
Mass
Static
Dielectric
Constant
Refractive
Index
Electron
Mobility
(cm
2
/V ⋅ s)
Hole
Mobility
(cm
2
/V ⋅ s)
PbTe NaCl 6.45 0.29L m
l
0.24 m
l
0.3 412 1400 1100 PbTe
m
h
0.02 m
h
0.02
ZnSiP
2
Chal a 5.400 2.96Г 0.07 100 ZnSiP
2
c 10.441 140
ZnSiAs
2
Chal a 5.606 2.12Г 0.07 ZnSiAs
2
c 10.890 20
ZnGeP
2
Chal a 5.465 2.34Г 0.5 ZnGeP
2
c 10.771 23
ZnGeAs
2
Chal a 5.670 1.15Г 0.4 ZnGeAs
2
c 11.153 55
ZnSnP
2
Chal a 5.651 1.66Г ZnSnP
2
c 11.302 200
ZnSnAs
2
Chal a 5.852 0.73Г 0.35 ZnSnAs
2
c 11.705
CdSiP
2
Chal a 5.678 2.45Г 0.09 0.7 CdSiP
2
c 10.431 150
CdSiAs
2
Chal a 5.884 1.55Г 500 CdSiAs
2
c 10.882
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