Nanoscale Semiconductor Memories

1	SRAM The Benchmark of VLSI Technology
Qingqing Liang

CONTENTS

1.1    Origins of Device Variation

1.1.1    Gate Length and Width

1.1.2    Gate Oxide Thickness

1.1.3    Channel Doping

1.1.4    Gate to Source/Drain Overlap

1.1.5    Mobility

1.1.6    Parasitic Resistance

1.2    Accurate Characterization of Statistics

1.2.1    General Representation of Variations

1.2.2    Links between Process and Device

1.3    Extract the Sigmas and Correlations

1.4    Design of SRAM

1.4.1    Basics of SRAM

1.4.2    SNM and Butterfly Curves

1.4.3    Yield Estimation, V_min, and Optimization

1.5    Conclusion

References

In all semiconductor memories, static random access memory (SRAM) is with the closest device structure to the conventional devices and is most ...