
188 Nanosensors: Physical, Chemical, and Biological
electrons with the atomic spins on the atoms. From the half-metallic source,
highly spin-polarized carriers are injected by tunneling across the Schottky
barrier into the Si channel. The half-metallic drain selectively extracts the
spin-polarized carriers from the channel. This happens only when the spin
conguration between the ferromagnetic source and drain is parallel. Hence,
the output current depends on the relative magnetization conguration of
the source and drain. Since the Si channel can be intrinsic, P-type, N-type,
or both P-type and N-type, spin MOSFETs, and, therefore, CMOS lo