[111] K. Hausler and N. Kirstaedter, “Method and device for passivation of the resonator end faces of
semiconductor lasers based on III-V semiconductor material,” U.S. Patent No. 7033852, 2006.
[112] M. McElhinney and P. Colombo, “Semiconductor lasers having single crystal mirror layers
grown directly on facet,” U.S. Patent No. 6590920, 2003.
[113] D. Crawford, M. McElhinney, R. McGowan et al., “Design and Performance of 980 nm Pump
Laser Modules Exhibiting Greater than 400 mW Kink-Free Fiber-Coupled Power,” in Proc. OFC
2002, 2002, pp. 482–483.
[114] N. Chand, “Passivated faceted article comprising a semiconductor laser,” U.S. Patent No.
5665637, 1997.
[115] M. Gasser and E. E. Latta, “Method for mirror passivation of semiconductor laser diodes,” ...