
1-16 Power Electronics and Motor Drives
from the anode and, consequently, in lower on-state voltages. As the channel resistance decreases with
the channel width, the increase in the cell density results in a signicant improvement of the E
o
–V
CEsat
trade-o relationship (Figure 1.14). Typical output characteristic of a 75 A 1200 V IGBT are shown in
Figure 1.15.
e turn-o behavior of a trench eld-stop IGBT is shown in Figure 1.16. At the beginning of
the turn-o period, the IGBT is in the conductive state, since the gate-emitter voltage is signi-
cantly higher than the threshold voltage. Consequently, the collector-emitter voltage drop is