
Electronic Devices for Power Switching 1-21
Meanwhile, several investigations on IGBTs with dynamic clamping capability have been reported
for voltage classes ranging from 1.2 up to 6.5 kV (e.g., [30–33]). It is worth noting that a CIGBT can
also be provided with a self-clamping function: if the p-n junction formed by the p-base and the n-well
region is properly designed, punch-through at a certain anode voltage results in a voltage clamp.
1.5 Unipolar Devices
1.5.1 High-Voltage Power MOSFET
In certain applications, minimizing the volume, weight, and of course the cost of transformers and
other inductive devices is aimed at, which is done ...