
1-26 Power Electronics and Motor Drives
typical bipolar reverse-recovery waveform. As expected, there is also no dependence of this capacitive
“recovery” charge (Q
c
) from temperature, forward current, or di/dt [40,41]. Of course, such Schottky
diodes can also be realized in silicon, but at a voltage rating >150 V, they suer signicantly from both
very high on-resistance and leakage current. Compared to ultrafast silicon diodes, the losses depend
strongly on di/dt, current level, and temperature; the SiC diodes are independent on these boundaries.
e structure of a plain Schottky diode is simple, as indicated in Figure 1.27a. One of the draw ...