efforts to make multi-gate devices involve these FinFET device structures. While devices
with sub-20 nm silicon body and gates less than 40 nm ha
ve been demonstrated, there are
still manufacturing challenges to make a product with millions of such transistors [10–14] .
While these novel devices make progress, new gate materials are also researched.
Incorporating these new materials is crucial to gain the maximum benefi ts out of these
novel structures. The use of metal gates instead of conventional polysilicon gates will
allow less parasitic resistance and poly depletion effects. P ...
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