Since leakage limitation constrains further reduction of t
, an alternative method to increase
gate capacitance is alter k by replacing silicon dioxide with a high-k material. In such a
scenario, a thicker gate layer might be used which can reduce the leakage current fl owing
through the structure as well as improving the gate dielectric reliability ( Figure 2.24 ).
Drain
Bulk
Gate oxide
NN
P
Source
Gate
Figure 2.24: Cross-Section of an Nch MOSFET Showing the Gate Oxide Dielectric
2.4.2.12 Gate Capacitance Impact on Drive Current
The drive current I
D
for a MOSFET can be written, using the gradual channel
approximation, ...
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