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Power Management in Mobile Devices
book

Power Management in Mobile Devices

by Findlay Shearer
April 2011
Intermediate to advanced content levelIntermediate to advanced
336 pages
13h 59m
English
Newnes
Content preview from Power Management in Mobile Devices
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www.newnespress.com
Chapter 2
Since leakage limitation constrains further reduction of t
, an alternative method to increase
gate capacitance is alter k by replacing silicon dioxide with a high-k material. In such a
scenario, a thicker gate layer might be used which can reduce the leakage current fl owing
through the structure as well as improving the gate dielectric reliability ( Figure 2.24 ).
Drain
Bulk
Gate oxide
NN
P
Source
Gate
Figure 2.24: Cross-Section of an Nch MOSFET Showing the Gate Oxide Dielectric
2.4.2.12 Gate Capacitance Impact on Drive Current
The drive current I
D
for a MOSFET can be written, using the gradual channel
approximation, ...
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Publisher Resources

ISBN: 9780750679589