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Figure 4.48 Energy band structure near the Fermi energy (μ) for a semiconductor material without impurities (middle column) or with n- or p-type doping (cf. text). The dark shading indicates the electron occupancy as a function of energy for a finite temperature (occupancy equal to unity corresponds to the maximum number of electrons at a given energy or energy interval that is consistent with the exclusion principle for Fermi-type particles).

4.4.1.1 Photovoltaic devices

Conversion of radiant energy (light quanta) into electrical energy can be achieved with the use of semiconductor materials, for which the electron excitation caused by impinging ...

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