RF Circuits for 5G Applications

4Gain-Bandwidth Enhancement Techniques for mmWave Fully-Integrated Amplifiers

Shalu C.¹*, Shakti Sindhu² and Amitesh Kumar^3†

¹National Centre for Flexible Electronics, Indian Institute of Technology, Kanpur, India

²Oorja Technical Services Pvt. Ltd., Indore, India

³Nextgen Adaptive System Laboratory (NASL), Department of Electrical Engineering, National Institute of Technology, Patna, Bihar, India

Abstract

Herein, filter fundamentals and basic design methodologies in order to attain the large gain bandwidth and additional methodology the Bode-Fano (B-F) limit have been discussed. The first section 4.1 deals with the fundamental RLC band-pass filter. In this section quality factor of filter and the noise are concisely reminded in order to set basis of resonant circuits. These circuits are generally amplifiers and oscillators for mmWave application. The next section 4.2 presents fourth order filters intended to attain gain-bandwidth improvement over the classical RLC tank. The main focus of next section is transformer based resonators. The parasitic interwinding capacitance consequence has been discussed that provides instinct on the operation of circuit. Further this conversation is stretched to attain impedance transformation in order to understand the power dividers and combiners.

Keywords: Bandpass filters, RLC tank circuits, capacitively coupled resonators, Bode-Fano limit, magentically coupled resonators, parasitic capacitance, equalization, frequency response

4.1 RLC ...