8RF Power Amplifiers
Anchal Tyagi1, Rachit Patel1* and Krishna Pandey2
1Department of Electronics and Communication Engineering, ABES Institute of Technology, Ghaziabad, India
2Department of Electronics and Communication Engineering, National Institute of Technology, Patna, Bihar, India
Abstract
In this chapter, the basic designing and characteristics of the RF Power Amplifier (PA) are discussed in depth. RF Power Amplifier designs are specially considered for various 5G and higher frequency applications. Here various approaches used to achieve and to optimize the performance of the Power Amplifier. Both the designing, Bipolar Power Amplifier and CMOS Power Amplifier discussed here. This chapter covers the designing parameters for RF Power Amplifier, classification of Power Amplifiers, different designing approaches to design the Bipolar PA and CMOS PA for the application in 5G. Linearization principles also discussed at the end of the chapter.
Keywords: RF power amplifier, efficiency, bipolar PA design, CMOS PA design, cascode structure, linearization
8.1 Specification
In this section, the different important specifications are discussed. Power amplifiers are being commonly used in the telecommunication system for delivering some amount of power to the antenna. Telecommunication standard define certain specification according to their technology i.e. UMTS specification is 24dBm (output power).
8.1.1 Efficiency
An RF front end always suffers some losses due to follower ...
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