RF Circuits for 5G Applications

14HBT High-Frequency Modeling and Integrated Parameter Extraction

Ashish Bhatnagar¹* and Rachit Patel²

¹Idemia Syscom India Private Limited, Noida, Uttar Pradesh, India

²Department of Electronics and Communication Engineering, ABES Institute of Technology, Ghaziabad, Uttar Pradesh, India

Abstract

In this chapter a non-linear, demonstrate for AlGaAs–GaAs HBT’s characterization in DC, minimal signal, and noise is mentioned. Conjointly some set of equations square measure thought-about to require into consideration in noise equations. This method is general and can be used to derive parameters from other microwave devices, such as MESFETs and high negatron efficiency semiconductors (HEMTs). This chapter is going to see associate in nursing a method for extracting interconnected parameters that is incontestable for a manufactory HBT from wherever we are going to show some wonderful results. The primary technique for obtaining the model parameter values of analogous circuit models is parameter extraction by fitting the model responses to measurements. Parameter extraction has traditionally relied on large signal measurements and DC parameter. For dc, small signal, and large signal research, the derived versions are appropriate.

Keywords: Parameter estimation, microwave devices, heterojunction bipolar transistors

14.1 HBT High-Frequency Modeling and Integrated Parameter Extraction

Need of greater speed and SNR ratio in analogue of electronic communications has grown and low-noise ...