The pre-etch integrated circuit data from Phadke et al. (1983) provide an example. The widths of lines made by a photoresist-nanoline tool are measured in five different locations on silicon wafers with measurements being taken before an etching process. There are eight experimental factors for the experiment: mask dimension, viscosity, spin speed, bake temperature, bake time, aperture, exposure, and developing time. These eight factors are applied to silicon wafers and then the line widths are determined at five locations on each wafer. Refer to Wolfinger and Tobias (1998) for further details.
The experimental design for the wafer experimental unit is derived from an L18 orthogonal array with 18 combinations ...
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