Modeling the performance of short-channel fully depleted silicon-on-insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs)

S. Ghosh,    Indian Institute of Technology Kharagpur, India


This chapter discusses different aspects in analytical modeling of silicon-on-insulator (SOI) MOSFETs which have emerged amongst the prime candidates for mobile communication and computation in the ‘Beyond Moore’s’ era. The chapter discusses two primary approaches in modeling of such devices. First, a one-dimensional model is analyzed which, by appropriate substitutions, is converted into a pseudo two-dimensional model. Later an exact two-dimensional model is described which is much more accurate than the first approach.

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