7

Power Semiconductor Devices

Maylay Trivedi and Krishna Shenai,     Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, Illinois, USA

7.1. Introduction

7.2. Breakdown Voltage

7.3. P-i-N Diode

7.3.1. Switching Characteristics

7.4. Schottky Diode

7.5. Power Bipolar Transistor

7.5.1. Switching Characteristics

7.6. Thyristor

7.6.1. Transient Operation

7.7. Gate Turn-Off Thyristor

7.8. Metal-Oxide-Semiconductor Field Effect Transistor

7.8.1. Switching Performance

7.8.2. Limits of Operation

7.8.3. Improved Structures

7.9. Insulated Gate Bipolar Transistor

7.9.1. Transient Operation

7.10. Other MOS-Gate Devices

7.11. Smart Power Technologies

7.12. Other Material Technologies

Bibliography ...

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