Power Semiconductor Devices
Maylay Trivedi and Krishna Shenai, Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, Illinois, USA
7.1. Introduction
7.2. Breakdown Voltage
7.3. P-i-N Diode
7.3.1. Switching Characteristics
7.4. Schottky Diode
7.5.1. Switching Characteristics
7.6. Thyristor
7.6.1. Transient Operation
7.8. Metal-Oxide-Semiconductor Field Effect Transistor
7.8.1. Switching Performance
7.8.2. Limits of Operation
7.8.3. Improved Structures
7.9. Insulated Gate Bipolar Transistor
7.9.1. Transient Operation
7.10. Other MOS-Gate Devices
7.11. Smart Power Technologies
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