Chapter 12 A 300-MM WAFER-LEVEL THREE-DIMENSIONAL INTEGRATION SCHEME USING TUNGSTEN THROUGH-SILICON VIA AND HYBRID CU-ADHESIVE BONDING
IBM Research
A 300-mm wafer-level three-dimensional integration (3DI) process using tungsten (W) through-silicon vias (TSVs) and hybrid Cu/adhesive wafer bonding is demonstrated. The W TSVs have fine pitch (5 μm), small critical dimension (1.5 μm), and high aspect ratio (17:1). A hybrid Cu/adhesive bonding approach, also called transfer-join (TJ) method, is used to interconnect the TSVs to a Cu BEOL in a bottom wafer. The process also features thinning of the top wafer to 20 μm and a ...
Get 3D Integration for VLSI Systems now with the O’Reilly learning platform.
O’Reilly members experience books, live events, courses curated by job role, and more from O’Reilly and nearly 200 top publishers.
